Semiconductor measurement technology
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Semiconductor measurement technology a collection of computer programs two-probe resistance (spreading resistance) and four-probe resistance calculations, RESPAC by John Albers

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Published by U.S. Dept. of Commerce, National Institute of Standards and Technology, Washington, D.C., For sale by Supt. of Docs., U.S. G.P.O. in Gaithersburg, MD .
Written in English

Subjects:

  • Semiconductors -- Computer programs,
  • Electric resistance, Spreading -- Computer programs

Book details:

Edition Notes

StatementJohn Albers and Harry L. Berkowitz
SeriesNIST special publication -- 400-91
ContributionsBerkowitz, Harry L
The Physical Object
FormatMicroform
Pagination139 p.
Number of Pages139
ID Numbers
Open LibraryOL16084978M

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Containing more than equations and nearly drawings, photographs, and micrographs,this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay. Book Abstract: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but. The number of measurement points varies by semiconductor device manufacturers or devices. Metrology is undertaken according to the following sampling method: 10 to points for one die* - 5 to 20 dies taken from one wafer - 1 to 2 wafers taken from one lot (25 wafers). Semiconductor device simulation software most commonly uses the drift–diffusion model to compute the flow of electrons and holes. Drift current is generated by an electric field and it is proportional to the conductivity of electrons σ n = qμ n n and holes σ ρ = μ. Diffusion current is driven by the concentration gradient of electrons ∇ and holes ∇.

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